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savantic semiconductor product specification silicon npn power transistors 2SD288 d escription with to-220c package collector-base voltage : v c bo =80v collector dissipation : p c =25w(t c =25 ) applications low frequency power amplifier power regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 55 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD288 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 55 v v (br)cbo collector-base breakdown voltage i c =0.5ma; i e =0 80 v v (br)ebo emitter-base breakdown votage i e =0.5ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =1 a;i b =0.1 a 1.0 v i cbo collector cut-off current v cb =50v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe dc current gain i c =0.5a ; v ce =5v 40 240 h fe classifications r o y 40-80 70-140 120-240
savantic semiconductor product specification 3 silicon npn power transistors 2SD288 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD288

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